silicon carbide (sic ) schottky diode semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab li semelab li semelab li semelab limited mitedmited mited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9175 issue 1 page 1 of 2 SML10SIC06SMDC hermetic ceramic surface mount package. semelab?s silicon carbide (sic) schottky diodes exhi bit low forward voltage and superb high temperature per formance. suitable for high-frequency hard switching applicat ions, where system efficiency and reliability are paramou nt. no reverse recovery time due to absence of minority carrier injection. screening options available. absolute maximum ratings (per diode, t c = 25c unless otherwise stated) v r dc reverse voltage 600v v rrm repetitive peak reverse voltage 600v i f dc forward current (t j = 175c) 10a i frm repetitive peak forward current (1) 67a i fsm surge peak forward current (2) 250a p d total power dissipation at 100w derate above 25c 0.5w/c t j junction temperature range -55 to +225c t stg storage temperature range -55 to +225c thermal properties symbols parameters max. units r jc thermal resistance, junction to case 2.0 c/w notes notes notes notes (1) (1)(1) (1) t c = 25 c, t p = 10ms, half sine wave, d = 0.3 (2) (2)(2) (2) t c = 25 c, t p = 10 s
silicon carbide (sic ) schottky diode SML10SIC06SMDC semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9175 issue 1 page 2 of 2 electrical characteristics (per diode, t c = 25c unless otherwise stated) static characteristics symbols parameters test conditions min. typ. max. units i f = 10a 1.5 1.8 v f forward voltage t j = 175c 2.0 2.4 v v r = 600v 10 50 i r reverse current t j = 175c 20 200 a dynamic characteristics q c total capacitive charge v r = 600v, i f = 10a i/ t = 500a/s 25 nc v r = 1.0v, f = 1.0mhz 480 v r = 200v, f = 1.0mhz 50 c total capacitance v r = 400v, f = 1.0mhz 42 pf mechanical data dimensions in mm (inches) smd1 (to - 276ab) underside view pad 1 ? anode 1 pad 2 ? common cathode pad 3 ? anode 2 3.60 (0.142) max. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 0.89 (0.035) min. 4.14 (0.163) 3.84 (0.151) 10.69 (0.421) 10.39 (0.409) 9.67 (0.381) 9.38 (0.369) 11.58 (0.456) 11.28 (0.444) 16.02 (0.631) 15.73 (0.619) 0.50 (0.020) 0.26 (0.010) 0.76 (0.030) min. 1 3 2 1 2 3
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